Toshiba, SanDisk to build sub-30nm NAND flash in 2010
September 21st, 2009 link to (permalink)
Toshiba and SanDisk will produce 20nm-class NAND flash memory at their joint-venture facility in Yokkaichi, Japan in the second half of 2010, DigiTimes reported on Monday, citing industry sources. The facility will scale up production to about 200,000 wafers per month as a result.
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